One-dimensional ZnO nanostructure-based optoelectronics
One-dimensional ZnO nanostructure-based optoelectronics
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基于一维ZnO纳米结构的光电子学
DOI：
10.1088/1674-1056/26/11/118102
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发表时间：
2017
影响因子：
1.7
通讯作者：
Zhang Yue
中科院分区：
文献类型：
--
作者：
Zhang Zheng;Kang Zhuo;Liao Qingliang;Zhang Xiaomei;Zhang Yue
半导体纳米线以其独特的连接纳米和宏观世界的能力，已被证明在能量转换、电子、光电子和生物传感器件方面具有潜在的应用。一维（1D） ZnO纳米结构具有半导体和压电耦合特性，已被广泛研究并广泛用于制造纳米级光电器件。本文综述了基于一维ZnO纳米结构的光电探测器以及通过应变工程、压电极化和界面调制来提高器件性能的最新进展。重点是对电学和光学现象、界面和接触行为以及器件特性的基本理解。最后，对一维ZnO纳米结构器件的发展前景和面临的挑战进行了展望。
Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed.