Evaluation of the local temperature of conductive filaments in resistive switching materials
Evaluation of the local temperature of conductive filaments in resistive switching materials
复制标题
电阻开关材料中导电丝局部温度的评估
DOI：
10.1088/0957-4484/23/46/465201
复制
发表时间：
2012
期刊：
影响因子：
3.5
通讯作者：
D. Ritter
中科院分区：
文献类型：
--
作者：
E. Yalon;S. Cohen;A. Gavrilov;D. Ritter
金属氧化物和其他介电材料的电阻开关效应是未来非易失性存储技术的主要方向之一。电阻开关被广泛地归因于氧化物中导电丝的形成和断裂，这是由温度增强的纳米级离子迁移或其他热效应产生的。尽管局部灯丝温度对开关效应、导通和可靠性物理都起着核心作用，但目前还没有灯丝温度的测量方法。在这项工作中，我们报告了一种利用金属-绝缘体-半导体双极晶体管结构来评估导电丝温度的方法。通过分析电子从灯丝费米能级进入p型半导体电极导带的热激发率，得到了灯丝温度。在3 ~ 300 K的不同环境温度范围内，测量了半氟乙烯中导电丝的温度。在整个测量的环境温度范围内，观察到灯丝的显著焦耳加热。提取的温度提供了对电阻开关效应的物理洞察。
The resistive switching effect in metal oxides and other dielectric materials is among the leading future non-volatile memory technologies. Resistive switching is widely ascribed to the formation and rupture of conductive filaments in the oxide, which are generated by temperature-enhanced nano-scale ion migration or other thermal effects. In spite of the central role of the local filament temperature on the switching effect, as well as on the conduction and reliability physics, no measurement methods of the filament temperature are yet available. In this work, we report on a method for evaluating the conducting filament temperature, using a metal–insulator–semiconductor bipolar transistor structure. The filament temperature is obtained by analyzing the thermal excitation rate of electrons from the filament Fermi level into the conduction band of a p-type semiconductor electrode. Measurements were carried out to obtain the conductive filament temperature in hafnia at varying ambient temperatures in the range of 3–300 K. Significant Joule heating of the filament was observed across the entire measured ambient temperature range. The extracted temperatures provide physical insight into the resistive switching effect.