Stabilized piezoelectricity upon ferro-ferro phase transition achieved by aging induced domain memory effect in acceptor doped lead-free ceramics
Stabilized piezoelectricity upon ferro-ferro phase transition achieved by aging induced domain memory effect in acceptor doped lead-free ceramics
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DOI：
10.1016/j.scriptamat.2022.114872
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发表时间：
2022
影响因子：
6
通讯作者：
Mengye Yin;Minxia Fang;Yuanchao Ji;Dong Wang;X. Ren
中科院分区：
文献类型：
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作者：
Mengye Yin;Minxia Fang;Yuanchao Ji;Dong Wang;X. Ren
由于室温下压电陶瓷的准同型/多晶型转变，其d33具有很强的温度依赖性，限制了高性能无铅压电陶瓷的实际应用。本工作发现，Mn掺杂无铅55 Ba中时效诱导的畴记忆效应通过铁电正交（O）-四方晶系（T）转变以及大的室温d33（d33@RT）有效地稳定了d33（Ti0.8Zr0.2）O3-45（Ba0.7Ca0.3）TiO 3压电陶瓷：与未掺杂样品相比，掺杂样品的O-T跃迁d33变化为23.2%，掺杂样品的33@RT ~（323）pC/N比未掺杂样品大（96.8%d33变异和d33@RT ≤ 278 pC/N）。利用内偏置场和双磁滞回线证明了缺陷偶极子根据对称性符合短程有序原理产生的恢复力，并通过透射电镜观察和相场模拟揭示了导致稳定行为的畴记忆效应.因此，老化诱导的畴记忆效应是有效的，同时实现稳定的行为和大的33@RT。
Strong temperature dependence of piezoelectricity (d33) attributed to morphotropic/polymorphic transition at room temperature limits the practical application of high performance lead-free piezoceramics. This work found aging induced domain memory effect is effective stabilizingd33through ferroelectric orthorhombic (O)-tetragonal (T) transition together with a large room temperatured33(d33@RT) in Mn doped lead-free 55Ba(Ti0.8Zr0.2)O3-45(Ba0.7Ca0.3)TiO3piezoceramics: 23.2%d33variation through O-T transition and a larged33@RT∼ 323 pC/N for doped one when compared with those of undoped one (96.8%d33variation andd33@RT∼ 278 pC/N). Restoring force induced by defect dipoles according to the symmetry conforming short-range ordering principle has been demonstrated with internal bias field and double hysteresis loops, while the outcoming domain memory effect, responsible for the stabilized behaviors, has been revealed with transmission electron microscopy observation and phase-field simulation. Thus, aging induced domain memory effect is effective achieving stabilized behaviors and larged33@RTsimultaneously.