Facile Route To Control the Ambipolar Transport in Semiconducting Polymers
Facile Route To Control the Ambipolar Transport in Semiconducting Polymers
复制标题
DOI：
10.1021/acs.chemmater.6b00298
复制
发表时间：
2016-04-12
影响因子：
8.6
通讯作者：
Kim, Yun-Hi
中科院分区：
文献类型：
--
作者：
Khim, Dongyoon;Cheon, Ye Rim;Kim, Yun-Hi
控制共轭分子中的电子和空穴输运是一项具有挑战性的重要任务，可以深入了解共轭分子中的固有电荷输运行为，以及优化各种光电器件性能的技术优势。在这里，我们建议一个简单的路线，以控制双极电荷传输共轭聚合物之间的共聚比例的精确调节相对较大的电子供体和受体的建筑块作为一个重复单元。通过改变聚[2，5-双（2-辛基十二烷基）吡咯并[3，4-c吡咯-1，4（2 H，SH）-二酮-（E）-[2，2-联噻吩]-5-基）-3-（噻吩-2-基）丙烯腈]（DPP-CNTVT）作为电子传输单元和DPP-硒代-亚乙烯基-硒代（DPP-SVS）作为空穴传输单元，有机场效应晶体管中的迁移率（μ（FET））和起始电压（V-on）被有效地从p沟道[μ（FET，h）= 6.23 +/-0.4cm（2）V-1 s（-1）]调制到n沟道[μ（FET，e）= 6.88 +/- 1.01 cm（2）V-1 s（-1）]优势运输。相同的两个基于DPP的结构单元不仅可以导致传输模式的精确可控性，而且还可以显著增加迁移率，而不会使聚合物主链共面性失真。我们还研究了双极晶体管中空穴和电子的偏置稳定性。我们的方法提供了一个新的战略，开发高性能的双极性聚合物半导体应用在印刷柔性集成电路和发光晶体管。
Control of electron and hole transport in conjugated molecules is a challenging but essential task for deeply understanding the intrinsic charge transport behaviors as well as technological benefits for optimizing the performance of various optoelectronic devices. Here we suggest a facile route to controlling ambipolar charge transport in conjugated polymers by precise regulation of the copolymerization ratio between a relatively large electron donor and acceptor building block as a repeating unit. By varying the ratio between poly[2,5-bis(2-octyldodecyl)pyrrolo [3,4-cpyrrole-1,4 (2H,SH)-dione-(E)-[2,2-bithiophen]-5-yl)-3-(thiophen-2-yl)a crylonitrile] (DPP-CNTVT) as an electron transport unit and DPP-selenophene-vinylene-selenophene (DPP-SVS) as a hole transport unit, mobility (mu(FET)) and onset voltage (V-on) in organic field-effect transistors are effectively modulated from p-channel [mu(FET,h) = 6.23 +/- 0.4 cm(2) V-1 s(-1)] to n-channel [mu(FET,e) = 6.88 +/- 1.01 cm(2) V-1 s(-1)] dominant transport. The same two DPP-based building blocks can lead not only to precise controllability of the transport mode but also significantly increased mobility without distortion of polymer backbone coplanarity. We also investigate bias stability of hole and electron in ambipolar transistors. Our methodology provides a new strategy for developing high-performance ambipolar polymer semiconductors for application in printed flexible integrated circuits and light-emitting transistors.