Interdiffusion of CdS and Zn2SnO4 layers and its application in CdS/CdTe polycrystalline thin-film solar cells
Interdiffusion of CdS and Zn2SnO4 layers and its application in CdS/CdTe polycrystalline thin-film solar cells
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DOI：
10.1063/1.1351539
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发表时间：
2001-03
影响因子：
3.2
通讯作者：
X. Wu;S. Asher;D. Levi;D. King;Y. Yan;T. Gessert;P. Sheldon
中科院分区：
文献类型：
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作者：
X. Wu;S. Asher;D. Levi;D. King;Y. Yan;T. Gessert;P. Sheldon
在这项工作中，我们发现CdS和Zn 2SnO 4（ZTO）层的相互扩散可以在高温（550-650 °C）下在Ar中发生，也可以在低温（400-420 °C）下在CdCl 2气氛中发生。通过将Zn 2SnO 4膜集成到CdS/CdTe太阳能电池中作为缓冲层，这种互扩散特征可以解决几个关键问题，并改善SnO 2基和Cd 2SnO 4基CdTe电池的器件性能和再现性。在器件制造过程中，相互扩散从ZTO和CdTe侧消耗CdS膜，并提高短波长下的量子效率。ZTO膜充当Zn源以与CdS膜合金化，这导致窗口层的带隙和短路电流密度Jsc增加。相互扩散还可以显著改善CdCl 2处理后的器件粘附性，从而在优化CdCl 2工艺步骤时提供更大的工艺宽容度。优化后的CdCl 2处理的CdTe器件在长波长处具有高的量子效率，
In this work, we found that the interdiffusion of the CdS and Zn2SnO4 (ZTO) layers can occur either at high temperature (550–650 °C) in Ar or at lower temperature (400–420 °C) in a CdCl2 atmosphere. By integrating a Zn2SnO4 film into a CdS/CdTe solar cell as a buffer layer, this interdiffusion feature can solve several critical issues and improve device performance and reproducibility of both SnO2-based and Cd2SnO4-based CdTe cells. Interdiffusion consumes the CdS film from both the ZTO and CdTe sides during the device fabrication process and improves quantum efficiency at short wavelengths. The ZTO film acts as a Zn source to alloy with the CdS film, which results in increases in the band gap of the window layer and in short-circuit current density Jsc. Interdiffusion can also significantly improve device adhesion after CdCl2 treatment, thus providing much greater process latitude when optimizing the CdCl2 process step. The optimum CdCl2-treated CdTe device has high quantum efficiency at long wavelength,...