Field emission of a single in-doped ZnO nanowire
Field emission of a single in-doped ZnO nanowire
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DOI：
10.1021/jp0666030
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发表时间：
2007-07-05
影响因子：
3.7
通讯作者：
Liu, Juan
中科院分区：
文献类型：
--
作者：
Huang, Yunhua;Zhang, Yue;Liu, Juan
以Zn、In2O3和石墨为原料，采用热蒸发法制备了In掺杂ZnO纳米线。用透射电子显微镜原位观察了In掺杂ZnO纳米线和纯ZnO纳米线的场发射。结果表明，In掺杂的ZnO纳米线具有增强的场发射性能。第一性原理密度泛函计算进行计算的In掺杂和纯ZnO的电子结构，以解释所观察到的场发射性能。提出了一种双能带场发射机制来解释n型掺杂增强的场发射。
In-doped ZnO nanowires were successfully fabricated by thermal evaporation of a powder mixture of Zn, In2O3, and graphite. Field emission of individual In-doped and pure ZnO nanowire was observed in situ by a transmission electron microscopy. The results show that In-doped ZnO nanowires showed an enhanced field emission properties. First-principle density functional calculations were performed to calculate the electronic structure of the In-doped and pure ZnO in order to explain the observed field emission properties. A two-band field emission mechanics was proposed to explain the enhanced field emission from n-type doping.