Soft Magnetic Property of [Fe80Ni20-O/ZnO]n Multilayer Thin Films for High-Frequency Application

Soft Magnetic Property of [Fe80Ni20-O/ZnO]n Multilayer Thin Films for High-Frequency Application
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DOI:
10.4028/www.scientific.net/amr.476-478.2335
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发表时间:
2012-02
期刊:
Advanced Materials Research
影响因子:
--
通讯作者:
Yuan-zhang Wang;H. Geng;S. Nie;Jian-Qing Wei;Laisen Wang;G. Yue;Yuanzhi Chen;D. Peng
Yuan-zhang Wang;H. Geng;S. Nie;Jian-Qing Wei;Laisen Wang;G. Yue;Yuanzhi Chen;D. Peng
中科院分区:
其他
文献类型:
--
作者:
Yuan-zhang Wang;H. Geng;S. Nie;Jian-Qing Wei;Laisen Wang;G. Yue;Yuanzhi Chen;D. Peng

文献摘要

相似文献

采用反应磁控溅射法在(100)取向的硅片和玻璃衬底上制备了一系列具有不同ZnO分离层厚度(t,0 ~ 3 nm)和固定Fe_(80)Ni_(20)-O层厚度(约5 nm)的[Fe_(80)Ni_(20)-O/ZnO]_n多层薄膜。微结构分析和静态磁测量结果表明,薄膜的磁性能可以通过改变ZnO单层厚度来调节。所有薄膜都表现出明显的面内单轴磁各向异性(IPUMA)。随着t的增加,面内单轴磁各向异性场(Hk)和电阻率(ρ)分别在8 ~ 57 Oe和62 ~ 168 μΩ·cm之间变化。而硬轴磁致伸缩率(Hch)和易轴磁致伸缩率(Hce)的值在t = 1 nm处分别显示1.5和3 Oe的最小值。
A series of [Fe80Ni20-O/ZnO]n multilayer thin films with different ZnO separate layer thicknesses (t, from 0 to 3 nm) and fixed Fe80Ni20-O layer thickness (about 5 nm) have been fabricated on (100)-oriented silicon wafers and glass substrates by reactive magnetron sputtering. Microstructure analysis and static magnetic measurement results indicate that the magnetic properties of the films can be adjusted by the variation of ZnO monolayers thickness. All films reveal an evident in-plane uniaxial magnetic anisotropy (IPUMA). The values of in-plane uniaxial magnetic anisotropy fields (Hk) and resistivity (ρ) can be changed from 8 to 57 Oe and 62 to 168 μΩ•cm respectively with the t increasing. While the values of hard axis coercivity (Hch) and easy axis coercivity (Hce) reveal minimums of 1.5 and 3 Oe respectively at t = 1 nm.