Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration
Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration
复制标题
用于 CMOS 兼容集成的低电压、高消光比、Mach-Zehnder 硅光调制器
DOI：
10.1364/oe.20.003209
复制
发表时间：
2012-01-30
期刊：
影响因子：
3.8
通讯作者：
Min, Rui
中科院分区：
文献类型：
--
作者：
Ding, Jianfeng;Chen, Hongtao;Min, Rui
我们展示了一种载流子耗尽型马赫-曾德尔硅光调制器，它与CMOS工艺兼容，在低驱动电压下工作良好。这是通过优化共面波导电极以减少电信号传输损耗来实现的。同时考虑了速度匹配和阻抗匹配。用2 mm长的移相器进行了12.5Gbit/s的数据传输实验。分别向器件施加具有1V和2 V摆幅的驱动电压以及0.5V和0.8V的反向偏置电压。相应的消光比为7.67和12.79 dB。(C)2012美国光学学会
We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB. (C) 2012 Optical Society of America