A study of transparent indium tin oxide (ITO) contact to p-GaN
A study of transparent indium tin oxide (ITO) contact to p-GaN
复制标题
DOI：
10.1016/s0040-6090(01)01368-2
复制
发表时间：
2001-11-01
期刊：
影响因子：
2.1
通讯作者：
Yeom, GY
中科院分区：
文献类型：
--
作者：
Kim, DW;Sung, YJ;Yeom, GY
采用金属有机物化学气相沉积（MOCVD）技术在（0001）蓝宝石衬底上生长了低10（17）/cm（3）的Mg掺杂p-GaN层，并在其上蒸镀了氧化铟锡（ITO）薄膜，研究了ITO薄膜的接触特性。蒸发的ITO膜的薄层电阻（Rs）在退火之前为几k Ω/矩形，但是在使用快速热退火（RTA）系统在N-2中退火之后薄层电阻降低到40-50 Ω/矩形。研究了衬底处理、退火时间和退火温度对蒸镀ITO/p型GaN薄膜的I-V特性和接触电阻率的影响。结果表明，在优化的工艺条件下，可以得到电阻在10（-1）SZcm（2）以下的ITO接触，有望作为GaN基发光二极管的欧姆接触。此外，在这些条件下，在420 nm波长下测得的ITO膜的光学透射率大于90%。（蓝色）。(C)2001 Elsevier Science B.V保留所有权利。
In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with low 10(17)/cm(3), grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire wafers, and its contact properties were investigated. The sheet resistance (Rs) of the evaporated ITO films was several k Omega/rectangle before the annealing but the sheet resistance decreased to 40-50 Omega /rectangle after the annealing in N-2 using a rapid thermal annealing (RTA) system. I-V characteristics and contact resistivities of the evaporated ITO on p-type GaN were investigated as a function of substrate treatment, annealing time, and annealing temperature. The results showed that, in optimized conditions, the ITO contacts with the resistance in the range of low 10(-1) SZ cm(2) could be obtained, and which is probably applicable as the ohmic contact for GaN-based light emitting diodes. Also, at these conditions, the measured optical transmittances of ITO film were above 90% at a wavelength of 420 nm. (blue). (C) 2001 Elsevier Science B.V All rights reserved.