Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes
Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes
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DOI：
10.1063/1.4808362
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发表时间：
2013-05
影响因子：
4
通讯作者：
B. Romanczyk;P. Thomas;D. Pawlik;S. Rommel;W. Loh;M. Wong;K. Majumdar;W. Wang;P. Kirsch
中科院分区：
文献类型：
--
作者：
B. Romanczyk;P. Thomas;D. Pawlik;S. Rommel;W. Loh;M. Wong;K. Majumdar;W. Wang;P. Kirsch
研究了掺杂剂浓度对In0.53Ga0.47As/GaAs0.5Sb0.5异质结Esaki隧道二极管电流密度的影响。增加掺杂密度导致峰值和齐纳电流密度增加。在- 0.5 V偏置下，两种不同结构的峰值电流密度分别为92 kA/cm2和572 kA/cm2，齐纳电流密度分别为994 kA/cm2和5.1 MA/cm2，峰谷电流比分别为6.0和5.4。峰值电流随面积的增加呈线性增长，直至直径为70纳米。基于掺杂密度和隧道势垒高度，对Esaki二极管的峰值电流密度进行了基准测试。
The impact of dopant concentration on the current densities of In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes is investigated. Increased doping density results in increased peak and Zener current densities. Two different structures were fabricated demonstrating peak current densities of 92 kA/cm2 and 572 kA/cm2, Zener current densities of 994 kA/cm2 and 5.1 MA/cm2 at a −0.5 V bias, and peak-to-valley current ratios of 6.0 and 5.4, respectively. The peak current scaled linearly with area down to a 70 nm diameter. The peak current densities were benchmarked against Esaki diodes from other material systems based on doping density and tunnel barrier height.