Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template
Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template
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DOI：
10.1088/0957-4484/19/25/255201
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发表时间：
2008-06
期刊：
影响因子：
3.5
通讯作者：
A. Miura;R. Tsukamoto;S. Yoshii;I. Yamashita;Y. Uraoka;T. Fuyuki
中科院分区：
文献类型：
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作者：
A. Miura;R. Tsukamoto;S. Yoshii;I. Yamashita;Y. Uraoka;T. Fuyuki
我们演示了非易失性闪存的制造，利用均匀尺寸的氧化钴（Co3O4）生物纳米点（Co-BND）结构，由笼形超分子蛋白质模板组装。在金属氧化物半导体场效应晶体管（MOSFET）结构中埋入高密度Co-BND阵列，作为浮动纳米点栅极存储器的电荷存储节点。我们观察到在制造的bnd嵌入式mosfet的漏极电流-栅极电压特性中存在顺时针磁滞。观察到的迟滞明显表明，由于嵌入式BND中的电荷限制以及嵌入式BND作为非易失性闪存的电荷存储节点的成功功能，嵌入式BND嵌入mosfet进行了存储操作。制备的co - bnd嵌入式mosfet具有良好的记忆性能，如宽的记忆窗口，长电荷保留和对重复写/擦除操作的高耐受性。提出了利用生物分子的多功能功能制造器件的新途径。
We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co3O4) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal–oxide–semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current–gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented.