The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium
The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium
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DOI：
10.1109/led.2012.2191386
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发表时间：
2012-06-01
影响因子：
4.9
通讯作者：
Saraswat, Krishna C.
中科院分区：
文献类型：
--
作者：
Roy, Arunanshu M.;Lin, Jason;Saraswat, Krishna C.
最近的实验表明，通过在界面处插入薄的隧道势垒，可以减少与n型Ge接触时的费米能级钉扎。在这些界面层中的固定电荷的存在下，可以有助于减少肖特基势垒。本文从理论上研究了隧道势垒固定电荷对接触电阻率的影响。通过模拟不同的隧道势垒材料和固定电荷密度，我们估计的固定电荷的大小需要这种机制发挥重要作用的费米能级unpinning。
Recent experiments have demonstrated a reduction of Fermi-level pinning in contacts to n-type Ge by the insertion of a thin tunnel barrier at the interface. The presence of fixed charge in these interface layers can contribute to Schottky-barrier reduction. This work theoretically studies the effect of tunnel-barrier fixed charge on the specific contact resistivity. By simulating various tunnel-barrier materials and fixed-charge densities, we estimate the magnitude of fixed charge required for this mechanism to play an important role in Fermi-level unpinning.