Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
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双束准分子激光和厚氧化层对大硅晶粒的位置控制
DOI：
10.1143/jjap.39.3872
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
P. Alkemade
中科院分区：
文献类型：
--
作者：
R. Ishihara;A. Burtsev;P. Alkemade
通过双准分子激光照射玻璃基板上的具有凸块和金属阵列的硅（Si）、二氧化硅（SiO2）的多层结构，将大Si晶粒阵列放置在预定位置。通过扫描电子显微镜（SEM）和电子背散射（EBSP）分析，研究了辐照能量密度和结构拓扑对晶粒尺寸和晶体结构的影响。在低能量密度的制度，许多小颗粒和花瓣状的颗粒上形成的SiO2凸点。随着辐照能量密度的增加，凸点上的小晶粒数量减少。在足够高的能量密度下，一个大到3.5微米的单个Si颗粒位于凸块的中心。虽然大Si晶粒的大部分区域具有单一的晶体学取向，但在晶粒的外围经常形成孪晶和小角度晶界。在位置控制的Si晶粒的中心没有择优取向。温度分布的数值分析表明，温度下降发生在凸点的中心，在激光照射期间和之后立即。位置控制的Si晶粒的直径随着中间SiO2层的总厚度的增加而增加，并取6.2 μm的最大值。
An array of large Si grains was placed at a predetermined position by dual excimer-laser irradiation of a multi-layer structure of silicon (Si), silicon dioxide (SiO2) with an array of bumps and metal on a glass substrate. We have investigated the effects of irradiating energy density and the topology of the structure on the grain size and crystallographic structure by scanning electron microscopy (SEM) and electron back-scattering pattern (EBSP) analysis. In the low-energy-density regime, numerous small grains and petal shaped grains formed on top of the SiO2 bumps. The number of small grains on the bumps decreased with increasing irradiating energy density. At sufficiently high energy densities, one single Si grain as large as 3.5 µm was positioned at the center of the bumps. Although most of the area of the large Si grain has a single crystallographic orientation, twins and low-angle grain boundaries are often formed at the periphery of the grain. There was no preferred crystallographic orientation in the center of the location-controlled Si grain. Numerical analysis of the temperature profile showed that a temperature drop occurs at the center of the bump, during and immediately after laser irradiation. The diameter of the location-controlled Si grain increased with total thickness of the intermediate SiO2 layer, and took the maximum value of 6.2 µm.