Semiconductor Bloch-equations formalism: Derivation and application to high-harmonic generation from Dirac fermions
Semiconductor Bloch-equations formalism: Derivation and application to high-harmonic generation from Dirac fermions
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DOI：
10.1103/physrevb.103.125419
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发表时间：
2021-03
影响因子：
3.7
通讯作者：
J. Wilhelm;P. Grössing;Adrian Seith;J. Crewse;Maximilian Nitsch;L. Weigl;C. Schmid;F. Evers
中科院分区：
文献类型：
--
作者：
J. Wilhelm;P. Grössing;Adrian Seith;J. Crewse;Maximilian Nitsch;L. Weigl;C. Schmid;F. Evers
我们重新推导的半导体布洛赫方程，强调密切联系的贝瑞连接。我们严格的推导揭示了存在两个进一步的贡献，目前，除了经常考虑的带内和极化相关的带间条款。额外的贡献变得相当大的情况下，与强大的退相或偶极矩阵元素时，强烈的波数依赖。我们应用的形式主义高谐波产生的狄拉克金属。额外的项在某些频率下显著地增加频率依赖性发射强度（高次谐波光谱），使总信号改变高达10倍。
We rederive the semiconductor Bloch equations emphasizing the close link to the Berry connection. Our rigorous derivation reveals the existence of two further contributions to the current, in addition to the frequently considered intraband and polarization-related interband terms. The extra contributions become sizable in situations with strong dephasing or when the dipole-matrix elements are strongly wave-number dependent. We apply the formalism to high-harmonic generation for a Dirac metal. The extra terms add to the frequency-dependent emission intensity (high-harmonic spectrum) significantly at certain frequencies changing the total signal up to a factor of 10.