Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths.
Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths.
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DOI：
10.1364/ol.423264
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发表时间：
2021-05
期刊：
影响因子：
3.6
通讯作者：
Yi Zhang;Shuang Zhang;Linlin Xu;Huixue Zhang;An’ge Wang;Maocheng Shan;Zhihua Zheng;Hao Wang;Feng Wu;J. Dai;Changqin Chen
中科院分区：
文献类型：
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作者：
Yi Zhang;Shuang Zhang;Linlin Xu;Huixue Zhang;An’ge Wang;Maocheng Shan;Zhihua Zheng;Hao Wang;Feng Wu;J. Dai;Changqin Chen
深紫外（DUV）LED在杀菌、水、空气净化等领域具有巨大的潜力。在这项工作中，具有不同的量子阱（QW）宽度的深紫外LED晶片生长的金属有机化学气相沉积。结果表明，所有芯片的光输出功率和峰值波长不仅与量子阱厚度有关，而且还受到翘曲的影响。据我们所知，第一次观察到同一晶圆上DUV LED芯片的LOP和峰值波长之间的正相关性，这对于提高DUV LED的良率和降低成本非常重要。此外，还研究了量子阱厚度对深紫外LED外量子效率的影响。随着量子阱厚度的增加，激子局域化效应减弱，量子限制斯塔克效应增强。因此，QW厚度为2 nm的DUV LED晶片具有最高的EQE和产量。这些发现不仅有助于提高DUV LED的效率，还为评估DUV LED晶圆的性能提供了新的见解。
Deep ultraviolet (DUV) LEDs have great potential in sterilization, water, air purification, and other fields. In this work, DUV LED wafers with different quantum well (QW) widths were grown by metal-organic chemical vapor deposition. It is found that the light output power (LOP) and peak wavelength of all chips are not only related to the QW thickness but also affected by warpage. For the first time, to the best of our knowledge, a positive correlation between the LOP and peak wavelength of DUV LED chips on the same wafer was observed, which is very important for improving the yield of DUV LEDs and reducing costs. Furthermore, the influence of QW thickness on the external quantum efficiency (EQE) of DUV LED has also been investigated. As the thickness of the QW increases, the exciton localization effect decreases and the quantum confinement Stark effect increases. Consequently, DUV LED wafers with a QW thickness of 2 nm have the highest EQE and yield. These findings not only help to improve the efficiency of DUV LEDs but also provide new insights for evaluating the performance of DUV LED wafers.