High-temperature oxidation of nano-multilayered TiAlCrSiN thin films in air
High-temperature oxidation of nano-multilayered TiAlCrSiN thin films in air
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DOI：
10.1016/j.surfcoat.2009.09.008
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发表时间：
2009-12
影响因子：
5.4
通讯作者：
T. Nguyen;Sun Kyu Kim;D. Lee
中科院分区：
文献类型：
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作者：
T. Nguyen;Sun Kyu Kim;D. Lee
采用阴极电弧等离子体沉积法制备了TiCrN和AlSiN纳米多层膜。它们的氧化特性在600和1000°C之间进行了长达70小时的空气中的研究。生成的氧化物主要由Cr2 O3、α-Al 2 O3、SiO2和金红石型TiO 2组成。TiAlCrSiN膜的氧化速度比TiN膜慢，比CrN或CrAlSiN膜快，表观活化能为36.4kJ/mol。在氧化过程中，最外层的TiO 2层由Ti离子向外扩散形成，而外层的Al 2 O3层由Al离子向外扩散形成。同时，通过氧离子的向内扩散，形成了内部（Al 2 O3，Cr2 O3）混合层和最内层的TiO 2层。SiO2主要存在于氧化物层的下部，由于其固定性。
Nano-multilayered TiAlCrSiN films consisting of alternating, crystalline TiCrN and AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and 1000°C for up to 70h in air. The formed oxides consisted primarily of Cr2O3, α-Al2O3, SiO2, and rutile-TiO2. The TiAlCrSiN films oxidized slower than the TiN films and faster than the CrN or CrAlSiN films, with an apparent activation energy of 36.4kJ/mol. During their oxidation, an outermost TiO2layer was formed by outward diffusion of Ti ions, and the outer Al2O3layer was formed by outward diffusion of Al ions. Simultaneously, an inner (Al2O3, Cr2O3)-mixed layer and an innermost TiO2layer were formed by the inward diffusion of oxygen ions. SiO2was present mainly in the lower part of the oxide layer due to its immobility.