Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes
Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes
复制标题
硅单光子雪崩二极管的雪崩击穿定时统计
DOI：
10.1109/jstqe.2017.2779834
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发表时间：
2018-03
影响因子：
4.9
通讯作者：
Jonathan D. Petticrew;S. Dimler;Xinxin Zhou;A. Morrison;C. Tan;J. Ng
中科院分区：
文献类型：
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作者：
Jonathan D. Petticrew;S. Dimler;Xinxin Zhou;A. Morrison;C. Tan;J. Ng
硅基单光子雪崩二极管（SPAD）被广泛用作可见光和近红外光子的单光子探测器。然而，一直缺乏准确解释这些设备的碰撞电离（雪崩击穿背后的机制）的物理模型。在本文中，我们提出了一个统计模拟模型，能够预测击穿概率，平均击穿时间，和定时抖动的硅SPAD。我们的模型固有地包含了由于声子散射引起的载流子死区，并允许非均匀电场。模型验证包括雪崩增益，过量噪声因子，击穿电压，击穿概率，和时序统计。使用我们的模型模拟n-on-p和p-on-n SPAD设计，我们发现，n-on-p设计提供了显着改善的平均击穿时间和时序抖动特性。击穿概率为0.5时，n-on-p设计的平均击穿时间和时序抖动分别比p-on-n设计小3倍和4倍。本文中报告的数据可从ORC数字存储库（DOI：10.15131/shef.data.4823248）获得。
Silicon-based single photon avalanche diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has, however, been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this paper, we present a statistical simulation model for silicon SPADs that is capable of predicting breakdown probability, mean time to breakdown, and timing jitter. Our model inherently incorporates carriers’ dead space due to phonon scattering and allows for nonuniform electric fields. Model validation included avalanche gain, excess noise factor, breakdown voltage, breakdown probability, and timing statistics. Simulating an n-on-p and a p-on-n SPAD design using our model, we found that the n-on-p design offers significantly improved mean time to breakdown and timing jitter characteristics. For a breakdown probability of 0.5, mean time to breakdown and timing jitter from the n-on-p design were 3 and 4 times smaller compared to those from the p-on-n design. The data reported in this paper are available from the ORDA digital repository (DOI: 10.15131/shef.data.4823248).