Oxygen adsorption on Cu–9 at. %Al(111) studied by low energy electron diffraction and Auger electron spectroscopy
Oxygen adsorption on Cu–9 at. %Al(111) studied by low energy electron diffraction and Auger electron spectroscopy
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通过低能电子衍射和俄歇电子能谱研究 Cu-9%Al(111) 上的氧吸附。
DOI：
10.1116/1.1560719
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Weijie Song
中科院分区：
文献类型：
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作者：
M. Yoshitake;S. Bera;Y. Yamauchi;Weijie Song
铜基合金用于电缆已经很长时间了。在微电子领域，人工智能已被用于电气布线。然而，很明显，电迁移发生在人工智能中，导致微小电线断裂。由于这个问题，铜布线在大多数先进的微处理器中使用。Cu金属比Al具有更强的腐蚀性，少量Al的Cu基合金有望解决电迁移和腐蚀问题。腐蚀的初始阶段是氧气吸附。利用低能电子衍射（LEED）和俄歇能谱研究了超高真空条件下Cu-9% Al（111）表面Al的偏析和氧在有/没有Al偏析表面的吸附。发现Al在表面偏析形成（∛×∛）R30°结构，在595 K以上该结构消失形成（1×1）结构，但Al仍然偏析。样品在不同温度下暴露在氧气中。吸氧量与结构无关。
Cu-based alloys have been used for electric cables for long time. In the field of microelectronics, Al had been used for electrical wiring. However, it became clear that electromigration occurs in Al that causes breaking of wires in minute wirings. Due to this problem, Cu wiring is used in most advanced microprocessors. Cu metal is more corrosive than Al and Cu-based alloys with a small amount of Al is expected to solve problems both on electromigration and corrosion. The initial stage of corrosion is oxygen adsorption. We studied surface segregation of Al on Cu–9% Al(111) and oxygen adsorption on the surface with/without Al segregation in ultrahigh vacuum by low energy electron diffraction (LEED) and Auger electron spectroscopy. It was found that Al segregates on the surface to form (∛×∛)R30° structure and the structure vanishes above 595 K to give (1×1) structure while Al still segregates. The specimen was exposed to oxygen at different temperatures. The amount of oxygen uptake was not structure depende...