Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air
Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air
复制标题
通过在空气中运行的扫描隧道显微镜在半导体表面生成图案
DOI：
10.1116/1.585202
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发表时间：
1991
影响因子：
1.4
通讯作者：
W. Tseng
中科院分区：
文献类型：
--
作者：
J. Dagata;J. Schneir;H. Harary;J. Bennett;W. Tseng
介绍了采用基于扫描隧道显微镜的技术在钝化半导体表面生成纳米级图案的最新结果。描述了氢钝化硅和硫钝化砷化镓表面的制备和表征，并讨论了通过扫描电子显微镜和飞行时间二次离子质谱法测定图案化区域的化学和形态特性。我们最近的演示表明，通过扫描隧道显微镜 (STM) 写入的超浅氧化物特征可以作为硅上选择性区域 GaAs 异质外延的有效掩模，用于说明实现基于 STM 的独特纳米技术所需的关键要求。
Recent results employing scanning tunneling microscope‐based techniques for the generation of nanometer‐scale patterns on passivated semiconductor surfaces are presented. Preparation and characterization of hydrogen‐passivated silicon and sulfur‐passivated gallium arsenide surfaces are described and the determination of the chemical and morphological properties of the patterned regions by scanning electron microscopy and time‐of‐flight secondary ion mass spectrometry are discussed. Our recent demonstration that ultrashallow, oxide features written by scanning tunneling microscope (STM) can serve as an effective mask for selective‐area GaAs heteroepitaxy on silicon is used to illustrate key requirements necessary for the realization of a unique, STM‐based nanotechnology.