Interface dewetting as a source of void formation and aggregation in phase change nanoscale actuators
Interface dewetting as a source of void formation and aggregation in phase change nanoscale actuators
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DOI：
10.1063/5.0137456
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发表时间：
2023-01
影响因子：
4
通讯作者：
Xinyi Fang;Mohammad Ayaz Masud;G. Piazza;J. Bain
中科院分区：
文献类型：
--
作者：
Xinyi Fang;Mohammad Ayaz Masud;G. Piazza;J. Bain
本文报道了相变材料（PCM）的碲化锗（GeTe）和薄的封装层的氧化铝之间发生的现象时，PCM经历的相变，从周围的氧化铝的PCM的去湿一致。大量的结构变化，包括形成大的空洞，这需要高达21.9%的初始GeTe体积后，10000相变周期观察。结构的电气和机械特性证实了这一解释。快速热退火试验的覆盖膜的氧化铝，证明去湿进一步验证了这一猜想。去湿和相关的总材料位移可以导致对应于178 nm GeTe厚层的一次性44 nm高度变化的异常致动。然而，需要对这种现象进行控制以构建不遭受封装层破裂的可靠致动器。
This paper reports a phenomenon occurring between phase change material (PCM) germanium telluride (GeTe) and a thin encapsulation layer of alumina when the PCM undergoes the phase transformation, consistent with dewetting of the PCM from the surrounding alumina. Massive structural change, including formation of large voids, which take up to 21.9% of the initial GeTe volume after 10 000 phase change cycles is observed. Electrical and mechanical characterization of the structure confirms this interpretation. A rapid thermal annealing test of blanket films on alumina that demonstrates dewetting further validates this conjecture. The dewetting and associated gross material displacement can lead to an extraordinary actuation corresponding to a one-time 44 nm height change for a 178 nm GeTe thick layer. However, control of this phenomenon is required to build reliable actuators that do not suffer from rupture of the encapsulation layer.