Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond
Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond
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单晶化学气相沉积金刚石高效电子发射二极管
DOI：
10.1143/jjap.37.l1011
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发表时间：
1998
影响因子：
1.5
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
Masaki Nishimura;A. Hatta;T. Ito
利用高压合成的金刚石厚膜同质外延生长的单晶金刚石薄膜制备了一种新型的高效率平板型电子发射二极管。在室温下，采用微波等离子体化学气相沉积（CVD）方法，将180 keV的N+离子注入到同质外延层中，注入剂量为1×1016 ions/cm ~ 2。由于该过程在作为电子发射表面的样品表面层中产生了显著的损伤，因此随后过度生长高质量的金刚石层以恢复受损的表面。在氢化表面和埋置电极之间施加亚kV的电压导致有效的电子发射（>10%）。
A novel type of flat electron emission diode with a high emission efficiency has been fabricated using single crystalline diamond thin films homoepitaxially grown on thick high-pressure-synthesized diamond. For the formation of the buried electrode, 180-keV N+ ions were implanted into the homoepitaxial layer grown by microwave plasma chemical-vapor-deposition (CVD) method to a dose 1×1016 ions/cm2 at room temperature. Since this process created a significant damage in the specimen surface layer working as the electron emission surface, a high quality diamond layer was subsequently overgrown to recover the damaged surface. Applying voltages of sub-kV between the hydrogenated surface and the buried electrode results in an efficient electron emission (>10%).