Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
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DOI：
10.1063/1.370601
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发表时间：
1999-06-01
影响因子：
3.2
通讯作者：
Narayan, J
中科院分区：
文献类型：
--
作者：
Muth, JF;Kolbas, RM;Narayan, J
研究了在c面蓝宝石衬底上用脉冲激光沉积法生长的高质量氧化锌单晶外延薄膜的光学特性。结果发现，在氧气中退火的薄膜显着改善的光学和电学性能。的吸收系数，带隙，和激子结合能确定通过传输测量和光致发光。在室温和77 K下，在退火和沉积态薄膜中都观察到激子吸收特征。在退火的薄膜中，激子吸收峰明显尖锐，深能级光致发光被抑制。(C)1999年美国物理学会。[S0021-8979（99）02611-0]。
The optical properties of high quality single crystal epitaxial zinc oxide thin films grown by pulsed laser deposition on c-plane sapphire substrates were studied. It was found that annealing the films in oxygen dramatically improved the optical and electrical properties. The absorption coefficient, band gap, and exciton binding energies were determined by transmission measurements and photoluminescence. In both the annealed and the as-deposited films excitonic absorption features were observed at both room temperature and 77 K. In the annealed films the excitonic absorption peaks were substantially sharper and deep level photoluminescence was suppressed. (C) 1999 American Institute of Physics. [S0021-8979(99)02611-0].