Obtaining TLP-like information from an HBM simulator

Obtaining TLP-like information from an HBM simulator
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从 HBM 模拟器获取类似 TLP 的信息

DOI:
10.1109/eosesd.2007.4401737
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发表时间:
2007
期刊:
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
影响因子:
--
通讯作者:
M. Hernandez
M. Hernandez
中科院分区:
--
文献类型:
--
作者:
E. Grand;M. Hernandez

文献摘要

被引文献

相似文献

从适当的HBM系统中获得TLP类型的数据。从HBM脉冲中测量了与TLP提取的参数相似的参数。引入了“DUT骤回阻抗”的新概念来解释DUT对1500 Ω HBM脉冲和各种阻抗TLP系统的响应。观察到的应力与HBM,不存在于TLP,可能会导致一些HBM-TLP的误相关。
Obtaining TLP-type data from properly instrumented HBM systems is demonstrated. Parameters similar to those extracted by TLP are measured from HBM pulses. The new concept of "DUT snapback impedance" is introduced to explain DUT response to 1500Omega HBM pulses and various impedance TLP systems. Observed stresses with HBM, not present in TLP, may account for some HBM-TLP miscorrelations.