Flux crystal growth of a new BaTa2O6 polymorph, and of the novel tantalum oxyfluoride salt inclusion phase [Ba3F]Ta4O12F: Flux dependent phase formation
Flux crystal growth of a new BaTa2O6 polymorph, and of the novel tantalum oxyfluoride salt inclusion phase [Ba3F]Ta4O12F: Flux dependent phase formation
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新型 BaTa2O6 多晶型物和新型氟氧化钽盐包合物相 [Ba3F]Ta4O12F 的助熔剂晶体生长:助熔剂依赖性相的形成
DOI:
10.1016/j.jssc.2020.121833
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发表时间:
2021
影响因子:
3.3
通讯作者:
zur Loye, Hans-Conrad
中科院分区:
文献类型:
--
作者:
Kutahyali Aslani, Ceren;Klepov, Vladislav V.;zur Loye, Hans-Conrad
A new hexagonal polymorph of BaTa2O6and a novel salt inclusion phase, [Ba3F]Ta4O12F, were obtainedviahigh temperature flux crystal growth using mixed alkali chloride/alkali fluoride fluxes. BaTa2O6and [Ba3F]Ta4O12F crystallize in the hexagonal and tetragonal space groupsP6/mmmandP42/mnm, respectively.The structure of BaTa2O6consists of TaO6octahedra that edge-shareviaequatorial O(2) to form Ta2O10dimers that further connect to form a 3D structure containing channels in which the barium cations are located. The morphology of this structure is substantially different from those of the three previously reported polymorphs of BaTa2O6. The structure of the salt inclusion phase, [Ba3F]Ta4O12F, consists of slightly zig-zagging chains of trans corner-sharing (viaO(3) and O(4)) TaO6octahedra that corner-share their equatorial O(1) and O(5) oxygens with TaO5F octahedra to create the framework for the Ba3F salt inclusion. The stability of BaTa2O6polymorphs was assessed using DFT calculations. The new hexagonal polymorph (ΔfH0 Kof −2825.11 kJ/mol) has a higher energy than the other three known phases and is 49.17 kJ/mol higher than the orthorhombic polymorph.
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影响因子:
4.6
作者:
Klepov, Vladislav V.;Juillerat, Christian A.;zur Loye, Hans-Conrad
通讯作者:
zur Loye, Hans-Conrad
影响因子:
15
作者:
L. Brixner
通讯作者:
L. Brixner
影响因子:
5.4
作者:
M. Vlasse;J. Chaminade;M. Pouchard
通讯作者:
M. Pouchard
影响因子:
5.4
作者:
M. Vlasse;A. Boukhari;J. Chaminade;M. Pouchard
通讯作者:
M. Pouchard
影响因子:
3.3
作者:
M. Vlasse;J. Chaminade;Jean Massies;M. Pouchard
通讯作者:
M. Pouchard