Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy
Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy
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DOI：
10.1002/pssb.201552783
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发表时间：
2016-05-01
影响因子：
1.6
通讯作者：
Tadatomo, Kazuyuki
中科院分区：
文献类型：
--
作者：
Okada, Narihito;Ihara, Hiroshi;Tadatomo, Kazuyuki
利用氢化物气相外延技术在双面抛光蓝宝石衬底上生长了GaN层。衬底两侧的GaN层是使用带有旋转机构的新的衬底交替生长的。尽管传统的生长在蓝宝石衬底一侧的GaN层具有较小的曲率半径，但交替双面生长的GaN模板具有较大的曲率半径。发现厚度为180微米的交替双面生长的GaN模板的曲率半径约为16.4m，大于常规GaN模板的0.5m的曲率半径。(C)2016年威利-VCH Verlag GmbH&Co.KGaA，Weinheim
GaN layers have been grown on double-side-polished sapphire substrates using hydride vapor phase epitaxy. The GaN layers on each side of the substrate were alternately grown using a new susceptor with a rotating mechanism. Although a conventional GaN layer grown on one side of a sapphire substrate exhibits a small radius of curvature, the alternately double-sided-grown GaN template exhibits a large radius of curvature. The radius of curvature of the alternately double-sided-grown GaN template with a thickness of 180 mu m was found to be approximately 16.4 m, and was larger than the 0.5 m radius of curvature of the conventional GaN template. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim