Extremely broad hysteresis in the magnetization process of α-Dy2S3 single crystal induced by high field cooling.

Extremely broad hysteresis in the magnetization process of α-Dy2S3 single crystal induced by high field cooling.
复制标题

高场冷却引起的 α-Dy2S3 单晶磁化过程中存在极宽的磁滞。

DOI:
10.1088/1742-6596/400/3/032010
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发表时间:
2012
期刊:
J. Phys.: Conf. Ser.
影响因子:
--
通讯作者:
M. Kokita and S. Nagata
M. Kokita and S. Nagata
中科院分区:
--
文献类型:
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作者:
S. Ebisu;K. Koyama;T. Horikoshi;M. Kokita and S. Nagata

文献摘要

相似文献

α-Dy 2S 3具有正交晶系的晶体结构,具有两个晶体学上不等价的Dy位.研究了α-Dy 2S 3单晶在18 T强磁场中冷却后的磁化过程。在沿着α轴的18 T磁场下,样品从150 K开始冷却,在70和40 K时磁化强度呈阶梯状上升,在1.5 K时达到约9 μ B/Dy 3+。该值相当于Dy 3+完全饱和磁矩的90%,远大于无磁场冷却(零场冷却; ZFC)后在相同条件下获得的6 μ B。冷却到1.5 K后,磁场下降时磁化强度在3.0 T和1.7 T时出现突变,在0 T时达到0 μ B。随后,随着磁场的增加,磁化强度呈现出与ZFC之后获得的磁化强度相似的曲线,而没有在13.1T以下的阶梯状上升。在μ 0 H= 13.1T时,磁化强度突然上升,并与下降过程的曲线相一致。这种不可逆的磁化过程产生非常宽的磁滞,其宽度为μ 0 ΔH= 11.4 T。在4.2和10 K时,还分别观察到较宽的滞后和较窄的滞后.
α-Dy 2 S 3 possesses orthorhombic crystal structure having two crystallograpically inequivalent Dy sites. Magnetization process of α-Dy 2 S 3 single crystal after cooling in the high magnetic field of 18 T has been investigated. The magnetization under the field of 18 T along the α-axis on the cooling process from 150 K shows step-like rises at 70 and 40 K and reaches about 9 μ B per one Dy 3+ at 1.5 K. This value, which corresponds to 90% of full saturation moment of Dy 3+, is much larger than 6 μ B obtained at the same conditions after cooling in no magnetic field (zero-field cooling; ZFC). After cooling to 1.5 K, the magnetization while decreasing field shows abrupt drops at 3.0 and 1.7 T, and then comes to 0 μ B at 0 T. Subsequently, while increasing field, the magnetization demonstrates a similar curve to that obtained after ZFC without step-like rise below 13.1 T. At μ 0 H= 13.1 T, the magnetization rises suddenly and agrees with the curve for the decreasing process. This irreversible magnetization process yields extremely broad hysteresis having width of μ 0 ΔH= 11.4 T. Broader hysteresis and narrower one are also observed at 4.2 and 10 K, respectively.