CATALYTIC SYNTHESIS AND GROWTH MECHANISM OF TUNGSTEN NANOWIRE ARRAYS ON SIO2 SUBSTRATES
CATALYTIC SYNTHESIS AND GROWTH MECHANISM OF TUNGSTEN NANOWIRE ARRAYS ON SIO2 SUBSTRATES
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DOI：
10.1142/s1793292013500100
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发表时间：
2013-02
期刊：
影响因子：
1.2
通讯作者：
Chao Wang;Yuehui He;Lizhen Hou;Shiliang Wang;Xiao-xiao Liu;Qiankun Zhang;C. Peng
中科院分区：
文献类型：
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作者：
Chao Wang;Yuehui He;Lizhen Hou;Shiliang Wang;Xiao-xiao Liu;Qiankun Zhang;C. Peng
采用化学气相沉积（CVD）技术，在950℃的温度下，在SiO2衬底上成功合成了直径约150 nm、长度约15 μm的单晶W纳米线。纳米线末端的催化剂为固态Ni4W，而非液态Ni4W。如果固体催化剂和纳米线的适当组合在热力学上是可行的，那么使用固体催化剂可以实现W纳米线的低温生长，从而暗示了在各种衬底上大面积集成生长的可能性。生成的[100]取向W纳米线的生长方向由固体Ni催化剂颗粒与W析出物之间的取向关系决定。通过对实验结果的分析，提出了一种可能的催化生长模型。研究了固体催化剂颗粒与核心的取向关系。
Single-crystalline W nanowires, with approximately 150 nm in diameter and 15 μm in length, have been successfully synthesized on SiO2 substrates by chemical vapor deposition (CVD) with the assistance of Ni catalysts at 950°C. The catalysts located at the tip of W nanowires were found to be Ni4W in a solid state, rather than a liquid state. The low-temperature growth of W nanowires using the solid catalysts can be generally accessible, provided that the appropriate combination of solid catalysts and nanowires are thermodynamically available, thus suggesting the implication for the potentially large-area integrated growth on various substrates. The growth direction of the generated [100]-oriented W nanowires was presumed to be determined by the orientation relationship between the solid Ni catalyst particle and the W precipitate. A possible catalytic growth model was proposed according to the analysis of the experimental results. The orientation relationship between the solid catalyst particle and the corre...