The Effect of Electron Irradiation on Cesium Fluoride-Free and Cesium Fluoride-Treated Cu(In1-x,Gax)Se2 Solar Cells
The Effect of Electron Irradiation on Cesium Fluoride-Free and Cesium Fluoride-Treated Cu(In1-x,Gax)Se2 Solar Cells
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电子辐照对无氟化铯和氟化铯处理的 Cu(In1-x,Gax)Se2 太阳能电池的影响
DOI：
10.1002/pssr.201900415
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Mutsumi Sugiyama
中科院分区：
文献类型：
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作者：
Ishwor Khatri;Tzu-Ying Lin;Tokio Nakada;Mutsumi Sugiyama
本文研究了电子辐照对无氟化铯（CsF）和经CsF处理的Cu(In1−x,Gax)Se2（CIGS）太阳能电池在1 × 1013 ~ 1 × 1017cm−2范围内的影响。由于电子轰击的浸泡效应，无CsF和经CsF处理的CIGS太阳能电池暴露在高达3 × 1015cm - 2的影响下均表现出自愈特性。这一特性表明了CIGS太阳能电池在长期太空探索中的坚固性。另一方面，超过1 × 1016cm−2的电子辐照抑制了无CsF和经CsF处理的样品的太阳能电池性能，这可能是由于在CIGS薄膜上形成了辐照诱导的缺陷。这一结果表明辐照诱导缺陷的形成与较重的碱金属掺入CIGS薄膜无关。研究了不同影响下的缺陷钝化和/或引入率。
Herein, the effects of electron irradiation on cesium fluoride (CsF)‐free and CsF‐treated Cu(In1−x,Gax)Se2(CIGS) solar cells with fluence from 1 × 1013to 1 × 1017cm−2are investigated. Both CsF‐free and CsF‐treated CIGS solar cells exposed to fluence up to 3 × 1015cm−2show self‐healing properties, due to the soaking effect from electron bombardment. This feature indicates the robustness of CIGS solar cells for long‐term space explorations. On the other hand, electron irradiation with fluence above 1 × 1016cm−2suppresses the solar cell performance of both CsF‐free and CsF‐treated samples, which is expected to be due to the formation of irradiation‐induced defects on the CIGS thin film. This result suggests that the formation of irradiation‐induced defects is independent of the incorporation of heavier alkali metals into the CIGS thin films. The defect passivation and/or introduction rates at different fluences are investigated.