GROWTH OF CARBON NANOTUBES IN ETCHED ION TRACKS IN SILICON OXIDE ON SILICON
GROWTH OF CARBON NANOTUBES IN ETCHED ION TRACKS IN SILICON OXIDE ON SILICON
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DOI：
10.1142/s1793292007000386
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发表时间：
2007-02
期刊：
影响因子：
1.2
通讯作者：
A. Berdinsky;P. Alegaonkar;H. C. Lee;J. S. Jung;Jae-Hee Han;J. Yoo;D. Fink;L. T. Chadderton
中科院分区：
文献类型：
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作者：
A. Berdinsky;P. Alegaonkar;H. C. Lee;J. S. Jung;Jae-Hee Han;J. Yoo;D. Fink;L. T. Chadderton
碳纳米管（CNTs）选择性生长在硅表面SiO2层的蚀刻离子轨道上。为此，镍催化剂纳米晶体最初通过电沉积沉积在离子轨道内。研究了等离子体增强化学气相沉积（PECVD）和热化学气相沉积（TCVD）制备的碳纳米管的结构细节和长度分布等特性。此外，还对其场发射特性进行了研究。分析表明，pecvd生长的碳纳米管呈圆柱形和/或锥形，直径通常与蚀刻轨迹一样大。通过应用一个简单的缺陷生长模型，可以很好地理解这些碳纳米管的指数长度分布。相比之下，使用TCVD而不是PECVD后，发现许多狭窄卷曲的CNTs聚集在彼此分离良好的点上。对pecvd生长的碳纳米管的拉曼研究表明，碳纳米管在生长过程中形成了Si-O-C和Si-C相。这些离子轨迹相关的pecvd生长的碳纳米管为基于TEMPOS概念的新型3D纳米电子器件的生产开辟了道路。这些结构也是碳纳米管中通道实验的优秀候选者。然而，由于平均场增强系数差，稳定性不足，作为场发射器件的应用显得不利。
Carbon nanotubes (CNTs) were selectively grown in etched ion tracks in SiO2 layers on Si. For this sake, Ni-catalyst nanocrystals were initially deposited within the ion tracks by galvanic deposition. The characteristics of plasma-enhanced chemical vapor deposition (PECVD)- and thermal chemical vapor deposition (TCVD)-grown CNTs, such as structural details and length distribution, were investigated. In addition, field emission properties were studied. The analysis revealed that the emerging PECVD-grown CNTs were of cylindrical and/or conical shape and usually had diameters as large as the etched tracks. The exponential length distribution of these CNTs can be well understood by applying a simple defect-growth model. For contrast, many narrow and curled CNTs were found to cluster in spots well separated from each other, after applying TCVD instead of PECVD. The Raman investigations of PECVD-grown CNTs showed that Si–O–C and Si–C phases had formed during the growth of the CNTs. These ion-track-correlated PECVD-grown CNTs open the way for the production of novel 3D nanoelectronic devices based on the TEMPOS concept. These structures are also excellent candidates for experiments on channeling in CNTs. Application as field emitting devices, however, appears unfavorable due to poor mean-field enhancement factors and insufficient stability.