Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode
Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode
复制标题
伽玛和重离子损伤对低击穿电压硅雪崩光电二极管脉冲响应和脉冲增益的影响
DOI：
10.1109/tns.2006.886042
复制
发表时间：
2006
影响因子：
1.8
通讯作者：
H. Itoh
中科院分区：
文献类型：
--
作者：
J. S. Laird;S. Onoda;T. Hirao;H. Becker;A. Johnston;H. Itoh
利用皮秒激光系统研究了位移和电离损伤对高带宽低击穿电压硅雪崩光电二极管脉冲响应的影响。使用Co 60 γ-照射或通过用MeV离子微束扫描装置产生损伤。伽马剂量高达100 kGy（Si）时，未观察到脉冲响应特性和增益的偏移。然而，暗电流测量的偏置接近典型的操作水平的辐射，表现出增强的电离损伤的数量级高于没有偏置。微束引入的位移损伤被用来区分保护环隔离氧化物中的电离损伤和体损伤。没有任何显着的变化，在脉冲响应进行了讨论，是可能的机制，为增强电离损伤
Effects of displacement and ionization damage on the impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode was investigated using a picosecond laser system. Damage was generated using either Co60 gamma-irradiation or by scanning the device with an MeV ion microbeam. No shift in the impulse response characteristics and gain was observed for gamma doses as high as 100 kGy(Si). However, dark current measurements for irradiations with biases close to typical operating levels, exhibited enhanced ionization damage orders of magnitude higher than for no bias. Displacement damage introduced by the microbeam was used to differentiate between ionization damage in the guard ring isolation oxide and bulk damage. The absence of any marked change in the impulse response is discussed, as are possible mechanisms for the enhanced ionization damage
DOI：
10.1016/j.nima.2005.01.081
发表时间：
2005-04
影响因子：
1.4
作者：
J. Kataoka;T. Saito;Y. Kuramoto;T. Ikagawa;Y. Yatsu;J. Kotoku;M. Arimoto;N. Kawai;Y. Ishikawa;N. Kawabata
通讯作者：
J. Kataoka;T. Saito;Y. Kuramoto;T. Ikagawa;Y. Yatsu;J. Kotoku;M. Arimoto;N. Kawai;Y. Ishikawa;N. Kawabata
雪崩光电二极管在高分辨率X射线和伽马射线探测方面的最新进展
DOI：
--
发表时间：
2005
期刊：
Nuclear Instruments and Method, section A (NIM-A) (出版中)(未定)
影响因子：
--
作者：
Y.Kawahigashi;R.Longo;片岡 淳(J.Kataoka) et al.
通讯作者：
片岡 淳(J.Kataoka) et al.