Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering

Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering
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BN 纳米管的自由基功能化:电亲和力无关的构型和能带结构工程

DOI:
10.1007/s11467-009-0024-8
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发表时间:
2009-05
期刊:
Frontier of Physics in China
影响因子:
--
通讯作者:
Zhenyu Yang
Zhenyu Yang
中科院分区:
其他
文献类型:
--
作者:
Zhen Zhou;Yafei Li;Zhenyu Yang

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采用密度泛函理论计算方法研究了几种自由基功能化氮化硼纳米管(BNNTs)的优选构型和电子结构。所有自由基都与管中的B原子有很强的相互作用,尽管自由基具有电亲合力。然而,虽然大量的电荷从管转移到NH2,OH或CN自由基,BNNT的电子结构发生的变化不大,而COOH和COCl自由基在费米能级附近引入半填充杂质能级。较高的功能化浓度导致费米能级附近的多个杂质态,并使BNNT成为p型半导体。
The preferable configuration and electronic structure of several types of free radical functionalized boron nitride nanotubes (BNNTs) were investigated by using density functional theory computations. All the free radicals have strong interaction with B atom in the tube, in spite of the electroaffinity of the radicals. However, though a large charge is transferred from tubes to NH2, OH or CN radicals, little change happens to the electronic structure of BNNTs, while COOH and COCl radicals introduce half-filled impurity levels around the Fermi level. Higher functionalization concentration leads to multiple impurity states around the Fermi level, and makes BNNTs p-type semiconductors.
DOI: 10.1063/1.1799958
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影响因子: --
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