Influence of zirconium ions on the key characteristics of V2O5 nanorods and current-voltage features of the n-ZrxV2O5/p-Si photodetector
Influence of zirconium ions on the key characteristics of V2O5 nanorods and current-voltage features of the n-ZrxV2O5/p-Si photodetector
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DOI：
10.1007/s10854-021-07492-z
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发表时间：
2022-01-07
影响因子：
2.8
通讯作者：
Ali, Atif Mossad
中科院分区：
文献类型：
--
作者：
Thangarasu, R.;Kulathuraan, K.;Ali, Atif Mossad
本文报道了纯V2O5纳米棒和掺锆V2O5纳米棒（Zr:V2O5; Zr at）的显微结构、形态学、光学和光响应特性。1、3、5和7 wt%)，通过湿沉淀法合成。毫无疑问，在实验条件下，已经提出了一种解释形态进化的生长机制。显微结构分析证实，制备的样品呈现出与V2O5正交结构一致的宽峰，且该模式中没有其他反射，保证了相纯度。利用Scherrer方程从衍射最具影响的（002）峰确定了优化后的平均晶粒尺寸，与TEM显微图计算结果一致。扫描电镜图像显示，由于zr掺杂水平的增加，表面颗粒聚集。拉曼光谱和XPS结果表明，掺杂Zr有利于V5+和氧空位的生成。记录的UV-DRS光谱显示了红移现象，估计的光带隙（E-g）随着Zr量的增加而减小，PL研究进一步证实了这一点。我们使用喷雾技术，这是一种经济、复杂、有效的方法来制备n-ZrxV2O5/p-Si光电探测器。所制备的n-ZrxV2O5/p-Si光电探测器具有良好的光导电性能。
This article reports microstructural, morphological, optical, and photoresponse characteristics of pure and zirconium-doped V2O5 nanorods (Zr:V2O5; Zr at. 1, 3, 5, and 7 wt%) that were synthesized via the wet precipitation method. Undoubtedly, under experimental conditions, a growth mechanism has been proposed which explains morphological evolution. The microstructural analysis confirmed that the prepared samples showed a broad peak consistent with the V2O5 orthorhombic structure, and the absences of other reflections in this pattern ensure the phase purity. The optimized average crystallite size is determined by using Scherrer's equation from the most influential (002) peak of diffraction, which has coincided with those calculated by the TEM micrograph. SEM images showed agglomerated particles on the surfaces owing to an increase in the Zr-doping levels. The outcomes of Raman and XPS indicate that Zr doping can facilitate the generation of V5+ and oxygen vacancy. The recorded UV-DRS spectra reveal the redshifts, and the estimated optical bandgap (E-g) was decreasing with increasing Zr amount, which is further confirmed by PL studies. We used the nebulizer spray technique, a cost-effective, sophisticated, and effective way to formulate an n-ZrxV2O5/p-Si photodetector. The formulated n-ZrxV2O5/p-Si photodetector has good photoconducting behavior.