Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions
Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions
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DOI：
10.1063/1.3232244
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发表时间：
2009-09
影响因子：
4
通讯作者：
Jennifer Wang;Chun-Yu Lee;Yungting Chen;Chung-Tse Chen;Yung-Ling Chen;Ching-Fuh Lin;Y. Chen
中科院分区：
文献类型：
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作者：
Jennifer Wang;Chun-Yu Lee;Yungting Chen;Chung-Tse Chen;Yung-Ling Chen;Ching-Fuh Lin;Y. Chen
采用射频磁控溅射结合水热工艺在氧化铟锡衬底上制备了p-NiO/n-ZnO纳米线异质结双面发光器件。根据能带的排列，所检测到的宽可见光和窄紫外电致发光分别来自ZnO纳米线中的缺陷和带边跃迁。这种独特的双面发光特性是由于NiO薄膜的大带隙性质。这为同时在顶侧和背侧上具有不同颜色的发光器件的发射提供了良好的机会。
Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously.