DC analysis of circuits with idealized diodes considering reverse bias breakdown phenomenon
DC analysis of circuits with idealized diodes considering reverse bias breakdown phenomenon
复制标题
考虑反向偏压击穿现象的理想化二极管电路的直流分析
DOI:
10.1109/81.563621
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发表时间:
1997
影响因子:
5.1
通讯作者:
M. Tadeusiewicz
中科院分区:
文献类型:
--
作者:
M. Tadeusiewicz
The resistive circuits containing idealized diodes are considered in this paper. The diodes are represented by three-segment characteristics enabling us to take into account the effect of reverse bias breakdown phenomenon. A parametric representation is developed leading to a well-defined description of the circuits. It is shown that this equation always has at least one solution and a region containing all the solutions can be easily determined. The necessary and sufficient conditions for uniqueness of the solution are also developed. The problem of finding a unique or multiple dc solutions of the circuits is considered in detail. It is shown that the Newton-Raphson algorithm can be used, in a very effective way, to determine a unique solution. The structure of the Jacobian matrix makes it possible to considerably improve the process of solving linear simultaneous equations at each iteration. Exploiting some properties of the parametric equation an algorithm is developed enabling us to determine all the dc solutions of this class of circuits. Moreover, some suggestions are given concerning computation of circuits including more realistic models of diodes and transistors. Several numerical examples are presented conforming usefulness of the proposed approach.
DOI:
--
发表时间:
2004
期刊:
Proceedings of IEEE 2004 International Conference on Communications, Circuits and Systems II
影响因子:
--
作者:
Kiyotaka Yamamura;Akinori Machida;Kiyotaka Yamamura
通讯作者:
Kiyotaka Yamamura