Fabrication of Ion-Cosubstituted Bismuth Titanate Thin Films by Chemical Solution Deposition Method
Fabrication of Ion-Cosubstituted Bismuth Titanate Thin Films by Chemical Solution Deposition Method
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DOI：
10.1080/10584580390254105
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发表时间：
2003-02
影响因子：
0.7
通讯作者：
H. Uchida;I. Okada;H. Matsuda;T. Iijima;Takayuki Watanabe;H. Funakubo
中科院分区：
文献类型：
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作者：
H. Uchida;I. Okada;H. Matsuda;T. Iijima;Takayuki Watanabe;H. Funakubo
离子共取代的BIT薄膜（Bi4.00-yLny）4-δ（Ti3.00-xXx）3 O 12（BLnTX）的铁电性质，具有各种镧系元素（Ln：例如，La 3+、Nd 3+、Pr 3+、Sm 3+）和高价离子（X：例如，V ~（5+）、Nb ~（5+）、Ta ~（5+）、W ~（6+）离子共取代的最佳条件。采用化学溶液沉积（CSD）技术在（111）Pt/Ti/SiO2/（100）Si衬底上制备了离子掺杂BIT薄膜。在Bi位取代的情况下，Pr 3+，Nd 3+和Sm 3+取代的BIT薄膜（BPT，BNT和BST）的反射极化（Pr）值比传统的La 3+取代的BIT薄膜（BLT）的大。其中，（Bi 3.50 Nd 0.50）Ti 3.00 O 12薄膜的Pr和Ec值分别为32 μC/cm 2和126 kV/ cm。另一方面，Ti位被高价阳离子取代后，BIT膜的大漏电流密度从10 - 6 A/cm 2降低到10 - 7 A/cm 2。V取代的（Bi 3.50 Nd 0.50）Ti 3.00 O 12薄膜，即，Nd 3 +/V 5+共取代的BIT薄膜（BNTV）的Pr值比未取代的（Bi 3.50 Nd 0.50）Ti 3.00 O 12薄膜大。（Bi 3.49Nd 0.50）（Ti 2.97V 0.03）O 12薄膜的Pr和Ec值分别为37 μC/cm 2和119 kV/cm，与传统的Pb基铁电薄膜如锆钛酸铅、Pb（Zr，Ti）O3相当。
Ferroelectric properties of ion-cosubstituted BIT thin films, (Bi4.00 − yLny)4-δ (Ti3.00-xXx)3O12 (BLnTX), with various lanthanoid (Ln: e.g., La3+, Nd3+, Pr3+, Sm3+) and higher-valent ions (X: e.g., V5+, Nb5+, Ta5+, W6+) were investigated to determine the optimum condition of the ion-cosubstitution. Ion-substituted BIT films were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. In the case of Bi-site substitution, Pr3+, Nd3+ and Sm3+-substituted BIT films (BPT, BNT and BST) had larger remanent polarization (P r ) values than that of conventional La3+-substituted BIT film (BLT). Especially, P r and E c values of (Bi3.50Nd0.50)Ti3.00O12 film were measured to be 32 μC/cm2 and 126 kV/ cm, respectively. On the other hand, Ti-site substitution by higher-valent cations degraded the large leakage current density of the BIT film from ∼10−6 down to ∼10−7 A/cm2. V-substituted (Bi3.50Nd0.50)Ti3.00O12 films, i.e., Nd3+/V5+-cosubstituted BIT films (BNTV), had larger P r values than that of non-substituted (Bi3.50Nd0.50)Ti3.00O12 film. (Bi3.49Nd0.50)(Ti2.97V0.03)O12 film possessed P r and E c values of 37 μC/cm2 and 119 kV/cm respectively, which were comparable with those of conventional Pb-based ferroelectric thin films like lead zirconate titanate, Pb(Zr,Ti)O3.