Hall effect in nested antiferromagnets near the quantum critical point.
Hall effect in nested antiferromagnets near the quantum critical point.
复制标题
量子临界点附近嵌套反铁磁体的霍尔效应。
DOI：
10.1103/physrevlett.90.116601
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发表时间：
2002
影响因子：
8.6
通讯作者：
R. Ramazashvili
中科院分区：
文献类型：
--
作者：
M. Norman;Q. Si;Y. Bazaliy;R. Ramazashvili
我们调查的行为的霍尔系数的情况下，反铁磁性驱动的费米面嵌套，并发现霍尔系数应突然增加的发病的磁性，最近观察到的钒掺杂铬。这种效应是由于在磁有序化时费米表面的平坦部分突然被移除。在该图中，霍尔系数应按剩余电阻率的平方除以杂质浓度来缩放，这与可用数据一致。
We investigate the behavior of the Hall coefficient in the case of antiferromagnetism driven by Fermi-surface nesting, and find that the Hall coefficient should abruptly increase with the onset of magnetism, as recently observed in vanadium doped chromium. This effect is due to the sudden removal of flat portions of the Fermi surface upon magnetic ordering. Within this picture, the Hall coefficient should scale as the square of the residual resistivity divided by the impurity concentration, which is consistent with available data.