High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯0) substrate by molecular-beam epitaxy
High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯0) substrate by molecular-beam epitaxy
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DOI：
10.1063/1.2352713
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发表时间：
2006-09
影响因子：
4
通讯作者：
M. Horita;J. Suda;T. Kimoto
中科院分区：
文献类型：
--
作者：
M. Horita;J. Suda;T. Kimoto
研究了在4H-碳化硅(112‘0)衬底上生长高质量的非极性(112’0)a面4H-AlN。用分子束外延技术在4H-SiC(112‘0)衬底上异质生长了非极性的4H-AlN(112’0)。通过保持生长表面的平坦，减少了诸如层错和螺纹位错等缺陷。为此，对碳化硅衬底进行了HCl气体刻蚀，并优化了氮化铝生长的V/III比。4H-AlN层的对称X射线衍射ω扫描的半峰全宽为40角秒。透射电子显微镜显示其层错密度为2×105 cm−1，部分和完全穿线位错密度分别为7×107和1×107 cm−2。
Growth of very high-quality nonpolar (112¯0) a-plane face 4H-AlN on 4H-SiC (112¯0) substrate was investigated. Nonpolar 4H-AlN (112¯0) was isopolytypically grown on 4H-SiC (112¯0) substrate by molecular-beam epitaxy. A reduction of defects such as stacking faults and threading dislocations was achieved by keeping the growing surface flat. To this end, the SiC substrate was HCl gas etched and the V/III ratio was optimized for AlN growth. A full width at half maximum of symmetrical x-ray diffraction ω scan of the 4H-AlN layer was 40arcsec. Transmission electron microscopy revealed the stacking fault density to be 2×105cm−1, and the partial and perfect threading dislocation densities to be 7×107 and 1×107cm−2, respectively.