Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H–SiC Homoepitaxial Film
Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H–SiC Homoepitaxial Film
复制标题
4H-SiC同质外延膜表面形貌缺陷与晶体缺陷的对应关系
DOI：
10.1143/jjap.41.6320
复制
发表时间：
2002
影响因子：
1.5
通讯作者：
F. Inoko
中科院分区：
文献类型：
--
作者：
T. Okada;T. Kimoto;H. Noda;Takahiro Ebisui;H. Matsunami;F. Inoko
利用透射电子显微镜研究了在（0001）切边衬底上同质外延生长的4 H-SiC薄膜在表面缺陷下的晶体学缺陷。“波浪坑”断层由一系列小的表面空洞和半环的完全位错组成，这些位错向它们的伯格斯矢量方向扩展。“胡萝卜”和“彗星”断层伴随着堆垛层错。表面缺陷下的晶体缺陷的几何形状与衬底的切向密切相关。讨论了地表断层的形成机制。
Conventional transmission electron microscopy was applied to study the nature of crystallographic defects under some types of surface morphological faults formed on a 4H–SiC film homoepitaxially grown on a (0001) off-cut substrate. “Wavy pit” faults consist of arrays of small surface cavities and half-loops of perfect dislocations expanding towards the direction of their Burgers vector. “Carrot” and “comet” faults are accompanied by stacking faults. The geometry of crystallographic defects under surface faults is closely related to the off-cut direction of the substrate. Formation mechanisms of surface faults are discussed.