On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) -: art. no. 014101
On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) -: art. no. 014101
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DOI：
10.1063/1.2136788
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发表时间：
2006-01-01
影响因子：
3.2
通讯作者：
Storck, P
中科院分区：
文献类型：
--
作者：
Schroeder, T;Zaumseil, P;Storck, P
利用六方晶到立方晶的相变，在Si（111）衬底上外延生长了无孪晶的立方（111）相三氧化二镨薄膜。同步辐射掠入射x射线衍射和透射电子显微镜被用来表征相变和薄膜结构。沉积态薄膜在（0001）取向的六方高温相三氧化二镨中生长单晶。原位X射线衍射研究推导出的六方到立方相转变的活化能为2.2 eV。透射电子显微镜观察表明，相变伴随着氧化物/Si（111）界面处的界面反应。所得立方（111）低温三氧化二镨膜是单晶的，并且仅显示B型堆叠。立方氧化物晶格相对于Si衬底的180度旋转由衬底/氧化物边界处的堆垛层错引起。
Twin-free epitaxial cubic (111) praseodymium sesquioxide films were prepared on Si(111) by hexagonal-to-cubic phase transition. Synchrotron radiation grazing incidence x-ray diffraction and transmission electron microscopy were applied to characterize the phase transition and the film structure. As-deposited films grow single crystalline in the (0001)-oriented hexagonal high-temperature phase of praseodymium sesquioxide. In situ x-ray diffraction studies deduce an activation energy of 2.2 eV for the hexagonal-to-cubic phase transition. Transmission electron microscopy shows that the phase transition is accompanied by an interface reaction at the oxide/Si(111) boundary. The resulting cubic (111) low-temperature praseodymium sesquioxide film is single crystalline and exclusively shows B-type stacking. The 180 degrees rotation of the cubic oxide lattice with respect to the Si substrate results from a stacking fault at the substrate/oxide boundary.