Non-destructive patterning of conducting-polymer devices using subtractive photolithography
Non-destructive patterning of conducting-polymer devices using subtractive photolithography
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DOI：
10.1016/j.orgel.2006.07.009
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发表时间：
2006-12-01
影响因子：
3.2
通讯作者：
Song, A. M.
中科院分区：
文献类型：
--
作者：
Balocco, C.;Majewski, L. A.;Song, A. M.
我们展示了一种无损、高通量、高分辨率的光刻图案化方法，利用成熟的硅技术的标准设备来制造基于紫外光刻的有机半导体器件。该方法可用于高产率地制造聚（3-己基噻吩）（P3HT）基有机薄膜晶体管（OTFT）。可重复演示具有直至下午 2 点的特征的模式。我们表明，为了将光刻胶旋涂到 P3HT 薄膜上并完全去除经过自组装单层处理的基板上的 P3HT 残留物，需要对加工步骤进行一些修改。与P3HT沟道未图案化的OTFT相比，图案化器件的开/关比提高了四个数量级以上，从约70到106，因为栅极漏电流显着降低。光刻工艺后提取的载流子迁移率不仅几乎没有变化，而且高达0.027 cm(2)/V s。在环境条件下制造和测量的基于 P3HT 的 OTFT 中，开/关比和迁移率都是报告的最佳值之一。 (c) 2006 Elsevier B.V. 保留所有权利。
We demonstrate a non-destructive, high-throughput, and high-resolution lithographic patterning method to fabricate organic-semiconductor devices based on UV lithography with the standard equipment of well-established silicon technology. The method is applied to fabricate poly(3-hexylthiophene) (P3HT)-based organic thin-film transistors (OTFTs) with high yield. Patterns with features down to 2 pm are reproducibly demonstrated. We show that a few modifications in the processing steps are necessary in order to spin-coat photoresist onto P3HT films and to completely remove P3HT residues on the substrates that have been treated with a self-assembled monolayer. Compared with OTFTs whose P3HT channels are not patterned, the on/off ratio of the patterned devices is improved by over four orders of magnitude from about 70 to 106, because of the dramatically reduced gate leakage current. The extracted carrier mobility is not only virtually unchanged after the lithography processes, but also as high as 0.027 cm(2)/V s. Both the on/off ratio and the mobility are among the best reported values in P3HT-based OTFTs fabricated and measured in ambient conditions. (c) 2006 Elsevier B.V. All rights reserved.