Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor
Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor
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DOI：
10.1109/led.2008.2002753
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发表时间：
2008-09
影响因子：
4.9
通讯作者：
H. Ishida;D. Shibata;M. Yanagihara;Y. Uemoto;H. Matsuo;T. Ueda;T. Tanaka;D. Ueda
中科院分区：
文献类型：
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作者：
H. Ishida;D. Shibata;M. Yanagihara;Y. Uemoto;H. Matsuo;T. Ueda;T. Tanaka;D. Ueda
基于自然超结的概念，提出了以GaN基材料为代表的极化半导体的击穿机理。在这一概念中，由于GaN和AlGaN材料两侧正负极化的精确匹配，材料中的平均电荷浓度在反向偏置条件下几乎为零，从而实现了极高的击穿电压。该模型通过器件模拟得到证实，器件模拟考虑了GaN基材料的所有极化电荷。此外，实验制造的GaN基肖特基势垒二极管显示出击穿电压沿阳极-阴极间距沿着线性增加，实现了超过9000 V的创纪录击穿电压。
A breakdown mechanism of polarized semiconductors represented by GaN-based materials is presented, based on the concept of a natural super junction, which is established by the inherent material polarization. In this concept, owing to the precise matching of positive and negative polarizations of both sides of GaN and AlGaN materials, average charge concentration in the material becomes nearly zero under reverse bias condition, which realizes extremely high breakdown voltage. This model is confirmed by device simulation taking all polarization charges of GaN-based materials into account. Furthermore, experimentally fabricated GaN-based Schottky barrier diodes showed a linear increase of breakdown voltage along the anode-cathode spacing, achieving a record breakdown voltage over 9000 V.