Effective Hamiltonian for High-Tc Cu Oxides
Effective Hamiltonian for High-Tc Cu Oxides
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高 Tc 铜氧化物的有效哈密顿量
DOI：
10.1143/jpsj.58.2845
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发表时间：
1989
影响因子：
1.7
通讯作者：
H. Fukuyama
中科院分区：
文献类型：
--
作者：
H. Matsukawa;H. Fukuyama
在考虑空穴和电子掺杂情况下的原子内和最近邻原子间库仑相互作用的基础上，基于Cu-O面上的Cu：Dx2-y2和O：Pσ轨道，导出了高温铜系氧化物超导体的有效哈密顿量.对于空穴掺杂，假设了铜离子的稳定性，证明了有效哈密顿量具有多种相互作用过程，并通过考虑一个铜自旋和一个氧带空穴的情况研究了这些相互作用过程的一些特征。在这种情况下，单重态的空间范围已经被考察到氧带宽度的线性数量级。对于电子掺杂，有效哈密顿量要简单得多，本质上与t-J模型相同。基于这些结果，我们讨论了t-J模型与高T_c铜氧化物的关联性。研究了锥体顶端和八面体顶端的Cu：D3z2-r2轨道和O：Pz轨道的影响。
The effective Hamiltonian for high- T c Cu-based oxide superconductors is derived based on Cu: d x 2 - y 2 and O: p σ orbitals in the Cu–O plane by taking into account the intra- and nearest-neighbor interatomic Coulomb interactions for both cases of hole and electron doping. For hole doping, where the stability of Cu ++ is assumed, the effective Hamiltonian proves to have various interaction processes, some features of which are studied by considering a case with a single Cu spin and one hole in the oxygen band. The spatial extent of the singlet-bound state in this case has been examined to the linear order of the oxygen band width. For electron doping the effective Hamiltonian is much simpler and essentially the same as the t - J model. Based on these results we discuss the relevance of the t - J model to the high- T c Cu oxides. The effects of Cu: d 3 z 2 - r 2 orbitals and O: p z orbitals at the apex of the pyramid or octahedron are also examined.