Low-energy (2-5 keV) argon damage in silicon
Low-energy (2-5 keV) argon damage in silicon
复制标题
低能 (2-5 keV) 氩气对硅的损伤
DOI：
10.1088/0022-3727/19/4/013
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
I. Wilson
中科院分区：
文献类型：
--
作者：
U. Bangert;P. Goodhew;C. Jeynes;I. Wilson
用卢瑟福背散射和透射电子显微镜研究了低能Ar轰击硅引起的损伤。在溅射清洗所需的剂量下，即使在低至2keV的Ar能量下也会形成气泡。尽管相当数量的气体在其他地方被捕获得更弱，并在较低的温度下释放，但这些气泡及其所含的Ar不能在1100摄氏度以下退火。气泡的稳定性可以用轰击过程中天然氧化物中氧的敲击作用来解释。除非Ar的入射角几乎是掠过，否则气泡的形成是无法避免的。
The damage caused by low-energy argon bombardment of silicon has been investigated by Rutherford back-scattering and transmission electron microscopy. At the doses required for sputter cleaning, gas bubbles are formed even at argon energies as low as 2 keV. The bubbles, and the argon they contain, cannot be annealed out below 1100 degrees C, although a significant amount of gas is trapped more weakly in other sites and is released at lower temperatures. The stability of the bubbles is explained in terms of the knock-in of oxygen from the native oxide during bombardment. The formation of bubbles cannot be avoided unless the angle of incidence of the argon is almost glancing.