Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots
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基质层成分对自组织InGaN量子点结构和光学性能的影响
DOI：
10.1063/1.4820935
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发表时间：
2013-09-07
影响因子：
3.2
通讯作者：
Yang, H.
中科院分区：
文献类型：
--
作者：
Li, Z. C.;Liu, J. P.;Yang, H.
采用金属有机物化学气相沉积（MOCVD）方法在GaN模板c面蓝宝石衬底上生长了发射波长从绿色到红色的InGaN自组织量子点。研究了基质层组分对InGaN量子点结构和光学性质的影响。在In0.1Ga0.9N基质层的生长过程中，观察到量子点的继续生长，导致量子点尺寸的增加。通过使用In_（0.1）Ga_（0.9）N基质层代替GaN基质层，可以抑制退火引起的InGaN量子点发射能量的蓝移。生长顶部GaN盖层后，在In0.1Ga0.9N基质层样品中观察到量子限制斯塔克效应引起的更大红移。采用这种方法，InGaN量子点样品发射波长为615 nm，内量子效率为24.3%已被增长。该方法的重要意义在于可以在更高的温度下生长出发射波长在绿色范围内的InGaN量子点，从而提高晶体质量，有利于提高绿色InGaN量子点发光二极管和激光二极管的效率。
Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition on the structural and optical properties of InGaN QDs have been investigated. A continued growth of QDs is observed during the growth of In0.1Ga0.9N matrix layer, which results in an increase of the QDs' size. By using In0.1Ga0.9N matrix layer instead of GaN one, the annealing induced blue-shift in emission energy of the InGaN QDs can be suppressed. After the growth of top GaN cap layer, a larger red-shift caused by the quantum confined Stark effect is observed in the sample with In0.1Ga0.9N matrix layer. Employing this method, InGaN QD sample emitting at 615 nm with an internal quantum efficiency of 24.3% has been grown. The significance of this method is that it allows a higher growth temperature of InGaN QDs with emission wavelength in the green range to improve the crystalline quality, which is beneficial to enhance the efficiency of green InGaN QD light-emitting-diodes and laser diodes.