Crystallization of SiC and its effects on microstructure, hardness and toughness in TaC/SiC multilayer films
Crystallization of SiC and its effects on microstructure, hardness and toughness in TaC/SiC multilayer films
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SiC的结晶及其对TaC/SiC多层薄膜微观结构、硬度和韧性的影响
DOI：
10.1016/j.ceramint.2017.09.220
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发表时间：
2018
影响因子：
5.2
通讯作者：
Zheng Weitao
中科院分区：
文献类型：
--
作者：
Du Suxuan;Zhang Kan;Wen Mao;Ren Ping;Meng Qingnan;Zhang Yidan;Zheng Weitao
采用磁控溅射法制备了一系列不同SiC厚度的TaC/SiC多层膜（tSiC），并利用X射线衍射（XRD）、透射电子显微镜（TEM）、原子力显微镜（AFM）、扫描电子显微镜（SEM）和纳米压痕等手段对薄膜的微观结构、硬度和韧性进行了研究。结果表明，在低tSiC（≤ 0.8nm）时，由于TaC层的模板效应，SiC与TaC层共格结晶生长。当tSiC= 0.8nm时，复合材料的硬度和韧性分别达到46.06GPa和4.21MPa m1/2，且界面共格良好。随着tSiC含量的进一步增加，SiC层部分转变为非晶结构，并逐渐失去共格界面，导致硬度和韧性迅速下降。在TaC/SiC多层膜中，SiC层的晶化和共格生长是实现超硬和高韧性的必要条件。
A series of TaC/SiC multilayer films with different SiC thicknesses (tSiC) have been prepared by magnetron sputtering and their microstructure, hardness and toughness investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and nanoindentation. Results show that SiC crystallized and grew coherently with TaC layers at low tSiC(≤ 0.8 nm), resulting from the template effect of TaC layers. Maximum hardness and toughness of 46.06 GPa and 4.21 MPa m1/2were achieved at tSiC= 0.8 nm with good coherent interface. With further increasing of tSiC, SiC layers partially transformed to an amorphous structure and gradually lost their coherent interface, leading to a rapid drop in hardness and toughness. The crystallization of SiC layers and the coherent growth are required to achieve superhardness and high toughness in the TaC/SiC multilayers.