Efficient Preparation of Large-Area Graphene Oxide Sheets for Transparent Conductive Films
Efficient Preparation of Large-Area Graphene Oxide Sheets for Transparent Conductive Films
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用于透明导电薄膜的大面积氧化石墨烯片的高效制备
DOI：
10.1021/nn1015506
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发表时间：
2010-09-01
期刊：
影响因子：
17.1
通讯作者：
Cheng, Hui-Ming
中科院分区：
文献类型：
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作者：
Zhao, Jinping;Pei, Songfeng;Cheng, Hui-Ming
大面积片对于石墨烯的基础研究和技术应用是高度期望的。在这里，我们介绍了一种改进的化学剥离技术来制备大面积氧化石墨烯（GO）片。所得GO片的最大面积可达40000 μ m2左右。我们发现GO面积与氧化石墨的C-O含量强烈相关，这使得合成的GO片的面积能够被控制。通过简单地改变氧化条件，GO片的平均面积约为100 μ m。约100 - 300人。1000 - 3000和7000 μ m（2）左右。对于透明导电膜应用，通过在液体/空气界面上自组装并通过HI酸还原来制造薄GO膜。我们发现，减少GO（rGO）薄膜的薄层电阻随着增加片面积在相同的透射率，因为减少的数量的层间隧道势垒。由平均面积近似于7000 μ m（2）的GO片制成的rGO膜在78%透射率下显示出840 Ω/sq的薄层电阻，这远低于由约100 μ m（2）的小面积GO片制成的rGO膜的薄层电阻（在79%透射率下为19.1k Ω/sq）。100 - 300 μ m（2），并且与通过化学气相沉积在Ni上生长的石墨烯膜相当。
Large-area sheets are highly desirable for fundamental research and technological applications of graphene. Here we introduce a modified chemical exfoliation technique to prepare large-area graphene oxide (GO) sheets. The maximum area of the GO sheets obtained can reach similar to 40000 mu m(2). We found that the GO area is strongly correlated with the C-O content of the graphite oxide, which enables the area of the synthesized GO sheets to be controlled. By simply changing oxidation conditions, GO sheets with an average area of ca. 100-300, ca. 1000-3000, and similar to 7000 mu m(2) were selectively synthesized. For transparent conductive film applications, thin GO films were fabricated by self-assembly on a liquid/air interface and reduced by HI acid. We found that the sheet resistance of the reduced GO (rGO) films decreases with increasing sheet area at the same transmittance because of the decrease in the number of intersheet tunneling barriers. The rGO film made from GO sheets with an average area of similar to 7000 mu m(2) shows a sheet resistance of 840 Omega/sq at 78% transmittance, which is much lower than that (19.1 k Omega/sq at 79% transmittance) of a rGO film made from small-area GO sheets of ca. 100-300 mu m(2), and comparable to that of graphene films grown on Ni by chemical vapor deposition.