Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory
Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory
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DOI：
10.1016/j.jmmm.2023.170624
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发表时间：
2023-03
影响因子：
2.7
通讯作者：
H. Arai;H. Imamura
中科院分区：
文献类型：
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作者：
H. Arai;H. Imamura
压控磁阻随机存取存储器（VC MRAM）是一种很有前途的低功耗高密度存储器。VC MRAM误码的主要原因是写错误和保留错误。随着存储单元大小的减小，数据保留时间的减少，导致在某一操作时间从写错误为主的区域过渡到保留错误为主的区域。本文介绍了从写错误为主区到保留错误为主区过渡的特征时间，并分析了特征时间与有效各向异性常数k0的关系。特征时间近似表示为t c= 2w τ，其中w为写入错误率，τ为Kalmkov（2004）导出的松弛时间。我们表明，对于较大的k0， tc随着k0的增加而增加，类似于τ。特征时间是设计用于机器学习和人工智能等各种应用的VC MRAM的关键参数。
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory cell decreases, the data retention time decreases, which causes a transition from the write-error-dominant region to the retention-error-dominant region at a certain operating time. Here we introduce the characteristic time of the transition from the write-error-dominant region to the retention-error-dominant region and analyze how the characteristic time depends on the effective anisotropy constant, K 0. The characteristic time is approximately expressed as t c= 2 w τ, where w is the write error rate, and τ is the relaxation time derived by Kalmkov (2004). We show that for large K 0, t c increases with increase of K 0 similar to τ. The characteristic time is a key parameter for designing the VC MRAM for the variety of applications such as machine learning and artificial intelligence.