Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model
Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model
复制标题
基于薛定谔和泊松方程自洽解以及局部迁移率模型的MOS晶体管分析
DOI：
10.1109/16.678531
复制
发表时间：
1998
影响因子：
3.1
通讯作者：
B. Majkusiak
中科院分区：
文献类型：
--
作者：
T. Janik;B. Majkusiak
通过比较薛定谔方程和泊松方程的自洽解与经典描述的结果，从理论上考虑了半导体表面区载流子能量量子化对MOS晶体管性能的影响.比较了表面电位和反型层电荷密度对栅电压的依赖关系。利用局域迁移率模型，首次比较了由两种描述得到的电子有效迁移率与有效电场之间的关系。常用的三角井近似的精度进行了检查。该近似用于计算晶体管的电流-电压（I-V）特性。根据当今VLSI/ULSI技术的最新发展水平，对具有高掺杂氧化物和高掺杂衬底的MOS晶体管进行了模拟。
The effects of carrier energy quantization in the semiconductor surface region on performance of the metal-oxide-semiconductor (MOS) transistor are theoretically considered by comparison of results of a self-consistent solution to the Schrodinger and Poisson equations and the results of the classical description. The gate voltage dependencies of the surface potential and inversion layer charge density are compared. Using the local mobility model the relations between the electron effective mobility and the electric effective field obtained from the both descriptions are for the first time compared. The accuracy of the commonly used triangular well approximation is examined. This approximation is used for calculation of the transistor current-voltage (I-V) characteristics. Simulations are performed for MOS transistors with ultrathin oxides and highly doped substrates, in accordance with the state of the art of today's VLSI/ULSI technology.