Rational growth of branched and hyperbranched nanowire structures
Rational growth of branched and hyperbranched nanowire structures
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DOI：
10.1021/nl049728u
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发表时间：
2004-05-01
期刊：
影响因子：
10.8
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Wang, D;Qian, F;Lieber, CM
通过多步纳米团簇催化气-液-固方法合成了分支和超支化纳米线结构。以这种方式制备的硅纳米线结构的扫描电子显微镜研究证实了支化纳米结构的形成，并表明分支密度可以通过纳米簇催化剂浓度来控制。这种相同的方法也用于生长分支氮化镓纳米线。对分支硅纳米线结构的高分辨率透射电子显微镜研究表明，分支从硅纳米线主干外延生长为单晶纳米线。另外，通过重复催化剂沉积和纳米线生长步骤以受控方式制备超支化硅纳米线结构。制备合理分支和超支化纳米线的能力应该为基础研究和应用开辟新的机会，包括三维纳米电子学。
Branched and hyperbranched nanowire structures were synthesized via a multistep nanocluster-catalyzed vapor-liquid-solid approach. Scanning electron microscopy studies of silicon nanowire structures prepared in this way confirmed the formation of branched nanostructures and showed that the branch density could be controlled by the nanocluster catalyst concentration. This same approach was also used to grow branched gallium nitride nanowires. High-resolution transmission electron microscopy studies of the branched silicon nanowire structures revealed that the branches grew epitaxially as single-crystal nanowires from the silicon nanowire backbone. In addition, hyperbranched silicon nanowire structures were prepared in a controlled manner by repeating the catalyst deposition and nanowire growth steps. The ability to prepare rationally branched and hyperbranched nanowires should open up new opportunities for both fundamental research and applications, including three-dimensional nanoelectronics.