THEORY OF COHERENT PHONON OSCILLATIONS IN SEMICONDUCTORS
THEORY OF COHERENT PHONON OSCILLATIONS IN SEMICONDUCTORS
复制标题
DOI：
10.1103/physrevlett.73.3243
复制
发表时间：
1994-12-12
影响因子：
8.6
通讯作者：
STANTON, CJ
中科院分区：
文献类型：
--
作者：
KUZNETSOV, AV;STANTON, CJ
我们给出了超快光脉冲激发半导体中实验观察到的相干声子振荡的微观解释。对于形变电子-声子耦合，只有Q=0的光学声子模与光激发对的总数直接耦合。超快光激发引起的载流子密度的快速变化是Q=0模振荡的驱动力。结果，这种模式被宏观上大量的相干声子占据。
We present a microscopic explanation of the experimentally observed coherent phonon oscillations in semiconductors excited by ultrafast optical pulses. For deformational electron-phonon coupling, only the q= 0 optical phonon mode is directly coupled to the total number of photoexcited pairs. Rapid changes in the carrier density due to ultrafast optical excitation act as a driving force for oscillations of the q= 0 mode. As a result, this mode becomes occupied by a macroscopically large number of coherent phonons.